? semiconductor components industries, llc, 2005 march, 2005 ? rev. 1 1 publication order number: dap222m3/d DAP222M3T5G preferred device product preview common anode silicon dual switching diodes these common anode silicon epitaxial planar dual diodes are designed for use in ultra high speed switching applications. the dap222 device is housed in the sot?723 package which is designed for low power surface mount applications, where board space is at a premium. ? fast t rr ? low c d ? esd performance: human body model; 2000 v, machine model 200 v ? available in 4 mm tape and reel ? this is a pb?free device maximum ratings (t a = 25 c) rating symbol value unit reverse voltage v r 80 v peak reverse voltage v rm 80 v forward current i f 100 ma peak forward current i fm 300 ma peak forward surge current i fsm (note 1) 2.0 a thermal characteristics rating symbol max unit power dissipation p d 260 mw junction temperature t j 150 c storage temperature t stg ?55 ~ + 150 c maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. t = 1.0 s. this document contains information on a product under development. on semiconductor reserves the right to change or discontinue this product without notice. http://onsemi.com preferred devices are recommended choices for future use and best overall value. device package shipping 2 ordering information DAP222M3T5G sot?723 8000/tape & reel sot?723 case 631aa style 4 marking diagram 1 2 3 p9 m p9 = specific device code m = date code 2for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. anode 3 12 cathode
DAP222M3T5G http://onsemi.com 2 electrical characteristics (t a = 25 c) characteristic symbol condition min max unit reverse voltage leakage current i r v r = 70 v ? 0.1 a forward voltage v f i f = 100 ma ? 1.2 v reverse breakdown voltage v r i r = 100 a 80 ? v diode capacitance c d v r = 6.0 v, f = 1.0 mhz ? 3.5 pf reverse recovery time t rr (note 2) i f = 5.0 ma, v r = 6.0 v, r l = 100 , i rr = 0.1 i r ? 4.0 ns 2. t rr test circuit for dap222 in figure 4.
DAP222M3T5G http://onsemi.com 3 typical electrical characteristics 100 0.2 0.4 v f , forward voltage (volts) 0.6 0.8 1.0 1.2 10 1.0 0.1 10 0 v r , reverse voltage (volts) 1.0 0.1 0.01 0.001 10 20 30 40 50 1.75 0 v r , reverse voltage (volts) 1.5 1.25 1.0 0.75 c d , diode capacitance (pf) 2468 i f , forward current (ma) figure 1. forward voltage figure 2. reverse current figure 3. diode capacitance t a = 150 c t a = 125 c t a = 85 c t a = 55 c t a = 25 c i r , reverse current ( m a) t a = 85 c t a = -40 c t a = 25 c a r l t r t p t 10% 90% v r t p = 2 s t r = 0.35 ns i f t rr t i rr = 0.1 i r i f = 5.0 ma v r = 6 v r l = 100 recovery time equivalent test circuit input pulse output pulse figure 4. reverse recovery time test circuit
DAP222M3T5G http://onsemi.com 4 package dimensions sot?723 case 631aa?01 issue b 1.0 0.039 mm inches scale 20:1 0.40 0.0157 0.40 0.0157 0.40 0.0157 0.40 0.0157 0.40 0.0157 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* dim min nom max millimeters a 0.45 0.50 0.55 b 0.15 0.21 0.27 b1 0.25 0.31 0.37 c 0.07 0.12 0.17 d 1.15 1.20 1.25 e 0.75 0.80 0.85 e 0.40 bsc h 1.15 1.20 1.25 l 0.15 0.20 0.25 0.018 0.020 0.022 0.0059 0.0083 0.0106 0.010 0.012 0.015 0.0028 0.0047 0.0067 0.045 0.047 0.049 0.03 0.032 0.034 0.016 bsc 0.045 0.047 0.049 0.0059 0.0079 0.0098 min nom max inches e notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeters. 3. maximum lead thickness includes lead finish. minimum lead thickness is the minimum thickness of base material. 4. dimensions d and e do not include mold flash, protrusions or gate burrs. d b1 e b e a l c h ?y? ?x? x 0.08 (0.0032) y 2x e 1 2 3 style 4: pin 1. cathode 2. cathode 3. anode on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 dap222m3/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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